A Smart SRAM-Cell Array for the Experimental Study of Variability Phenomena in CMOS Technologies
Author:
Affiliation:
1. IMSE-CNM (CSIC/Universidad de Sevilla),Instituto de Microelectrónica de Sevilla,Sevilla,Spain,41092
2. imec,Leuven,Belgium,3001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764587.pdf?arnumber=9764587
Reference21 articles.
1. Advanced MOSFET variability and reliability characterization array;bury;IEEE International Reliability Physics Symposium (IRPS),2017
2. Probabilistic defect occupancy model for NBTI
3. Design Considerations of an SRAM Array for the Statistical Validation of Time-Dependent Variability Models
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5. A two-stage model for negative bias temperature instability
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