Linearity Performance of Double Metal Negative Capacitance Field-Effect Transistors: A Numerical Study
Author:
Affiliation:
1. Delhi Technological University,Department of Applied Physics,Delhi,India
2. Delhi Technological University,Department of Biotechnology,Delhi,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9811418/9811430/09811468.pdf?arnumber=9811468
Reference17 articles.
1. Gate Oxide Variability Analysis of a Novel 3 nm Truncated Fin–FinFET for High Circuitry Performance
2. Impact of Graded Back-Barrier on Linearity of Recessed Gate InAlN/GaN HEMT
3. A Numerical Study of Analog Parameter of Negative Capacitance Field Effect Transistor with Spacer
4. Simulation Study on the Design of Sub-$kT/q$ Non-Hysteretic Negative Capacitance FET Using Capacitance Matching
5. Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor
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