A Numerical Study of Analog Parameter of Negative Capacitance Field Effect Transistor with Spacer
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9673137/9672771/09673324.pdf?arnumber=9673324
Reference17 articles.
1. Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications
2. Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability
3. Laterally amalgamated DUal Material GAte Concave (L-DUMGAC) MOSFET for ULSI
4. Mathematical modeling insight of hetero gate dielectric-dual material gate-gaa-tunnel fet for vlsi/analog applications;madan;Microsystem Technologies,2017
5. Impact of high-k gate dielectric on analog and RF performance of nanoscale DG-MOSFET
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