Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V-Reference-Cited by-同舟云学术

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Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V

Published:2015-02 Issue:2 Volume:62 Page:538-545
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hahn Herwig¹^ORCID,Benkhelifa Fouad²,Ambacher Oliver²,Brunner Frank³,Noculak Achim⁴,Kalisch Holger¹,Vescan Andrei¹

Affiliation:

1. GaN Device Technology, RWTH Aachen University, Aachen, Germany

2. Fraunhofer Institute for Applied Solid State Physics, Freiburg, Germany

3. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany

4. Chair of Electromagnetic Theory, RWTH Aachen University, Aachen, Germany

Funder

Bundesmininisterium für Bildung und Forschung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7015642/06999946.pdf?arnumber=6999946

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