Enhancement-Mode MOSHEMT
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-2165-0_10
Reference17 articles.
1. T. Imada, M. Kanamura, T. Kikkawa, Enhancement-mode GaN MISHEMTs for power supplies. IEEE Power Electron. Conf. 1027–1033 (2010)
2. S.L. Zhao, B. Hou, W.W. Chen, M.H. Mi, J.X. Zheng, J.C. Zhang, X.H. Ma, Y. Hao, Analysis of the breakdown characterization method in GaN-based HEMTs. IEEE Trans. Power Electron. 31, 1517–1527 (2016)
3. H. Hahn et al., Threshold voltage engineering in GaN-based HFETs: A systematic study with the threshold voltage reaching more than 2V. IEEE Trans. Electron Devices 62(2), 538–545 (2015)
4. N. Ikeda, S. Kaya, J. Li, Y. Sato, S. Kato, S. Yoshida, High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse, in 20th International Symposium Power Semiconductor Devices IC’s (2008), pp. 287–290
5. Y. Suzuki, K. Tone, J.T. Asubar, H. Tokuda, M. Kuzuhara, High drain current and low on-resistance in AlGaN/GaN HEMTs with Au-plated ohmic electrodes. IEEE Int. Meet. Future Electron Devices (2015)
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