Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect-Reference-Cited by-同舟云学术

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Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect

Published:2016-04 Issue: Volume: Page:
ISSN:
Container-title:2016 17th Latin-American Test Symposium (LATS)
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Author:

Karel Amit,Comte Mariane,Galliere Jean-Marc,Azais Florence,Renovell Michel

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7477975/7483323/07483352.pdf?arnumber=7483352

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Source/Drain Engineered Silicon-on-Insulator Transistor with Improved Analog Performance;Lecture Notes in Electrical Engineering;2022-09-04

2. Analytical Models for the Evaluation of Resistive Short Defect Detectability in Presence of Process Variations: Application to 28nm Bulk and FDSOI Technologies;Journal of Electronic Testing;2019-02

3. Rapid Fabrication of 100 nm or Thinner Fully Depleted Silicon-on-Insulator Materials for Ultralow Energy Consumption;ACS Applied Nano Materials;2018-04-24

4. Detectability Challenges of Bridge Defects in FinFET Based Logic Cells;Journal of Electronic Testing;2018-02-23

5. Resistive Bridging Defect Detection in Bulk, FDSOI and FinFET Technologies;Journal of Electronic Testing;2017-06-29

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