Author:
Upadhyay Shailesh Shankar,Yadava Narendra,Gupta Mangal Deep,Chauhan R. K.
Publisher
Springer Nature Singapore
Reference12 articles.
1. Moore GE (1975) Progress in digital integrated electronics. international electron devices meeting, IEEE 11–13. http://www.eng.auburn.edu/~agrawvd/COURSE/E7770_Spr07/READ/Gordon_Moore_1975_Speech.pdf
2. Iwai H (2008) CMOS technology after reaching the scale limit, extended abstracts—2008 8th international workshop on junction technology (IWJT ‘08), Shanghai, pp 1–2
3. Nowak JE (2004) Turning silicon on its edge double gate CMOS/FinFET technology. IEEE Circ Dev Magaz 20(1):20–31
4. Magarshack P, Flatresse P, Cesana G (2013) UTBB FD-SOI: a process/design symbiosis for breakthrough energy-efficiency. In: 2013 design, automation and test in Europe conference and exhibition (DATE), Grenoble, France, pp 952–957
5. Karel A, Comte M, Galliere J, Azais F, Renovell M (2016) Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect. In: 17th Latin-American test symposium (LATS), Foz do Iguacu, pp 129–134