Analyzing NBTI impact on SRAMs with resistive-open defects-Reference-Cited by-同舟云学术

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Analyzing NBTI impact on SRAMs with resistive-open defects

Published:2016-04 Issue: Volume: Page:
ISSN:
Container-title:2016 17th Latin-American Test Symposium (LATS)
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Author:

Martins M. Tulio,Medeiros G.,Copetti T.,Vargas F.,Poehls L. Bolzani

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7477975/7483323/07483345.pdf?arnumber=7483345

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Aggravated NBTI reliability due to hard-to-detect open defects;Microelectronics Reliability;2024-09

2. The effect of resistive open faults on SRAM;AIP Conference Proceedings;2024

3. Comparative Analysis of Open and Short Defects in Embedded SRAM Using Parasitic Extraction Method for Deep Submicron Technology;Wireless Personal Communications;2023-08-28

4. Analysis of Open Defect Faults in Single 6T SRAM Cell Using R and C Parasitic Extraction Method;2021 International Conference on Disruptive Technologies for Multi-Disciplinary Research and Applications (CENTCON);2021-11-19

5. Analysing NBTI Impact on SRAMs with Resistive Defects;Journal of Electronic Testing;2017-10

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