Requirements for ultra-thin-film devices and new materials on CMOS roadmap-Reference-Cited by-同舟云学术

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Requirements for ultra-thin-film devices and new materials on CMOS roadmap

Published:2003 Issue: Volume: Page:
ISSN:
Container-title:2003 IEEE International Conference on Robotics and Automation (Cat No 03CH37422) SOI-03)
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Author:

Fenouillet-Beranger ,Skotnicki ,Monfray ,Carriere ,Boeuf

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8805/27853/01242930.pdf?arnumber=1242930

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fully Depletion of Advanced Silicon on Insulator MOSFETs;Critical Reviews in Solid State and Materials Sciences;2015-02-18

2. Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit;Solid-State Electronics;2014-07

3. Silicon‐on‐insulator MOSFETs models in analog/RF domain;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2013-11-28

4. Thin-film devices for low power applications;Solid-State Electronics;2010-02

5. FDSOI devices with thin BOX and ground plane integration for 32nm node and below;Solid-State Electronics;2009-07

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