Electrical Characteristic analysis of Gate Underlap Strain Channel Cylindrical GAA FET
Author:
Affiliation:
1. NIT Mizoram,Department of Electronics and Communication Engineering,Chaltlang, Aizwal,Mizoram,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10423305/10423394/10423460.pdf?arnumber=10423460
Reference20 articles.
1. Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs
2. INVESTIGATION OF SHORT CHANNEL EFFECT ON VERTICAL STRUCTURES IN NANOSCALE MOSFET
3. Special Issue: Nanowire Field-Effect Transistor (FET)
4. Gate Stack High-κ Materials for Si-Based MOSFETs Past, Present, and Futures;Mohsenifar;Microelectronics and Solid State Electronics,2015
5. Process design and optimization of the channel doping profile in power VDMOSFETs
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3