Process design and optimization of the channel doping profile in power VDMOSFETs-Reference-Cited by-同舟云学术

Process design and optimization of the channel doping profile in power VDMOSFETs

Author:

Pantić D.,Prijić Z.,Pavlović Z.

Publisher

Elsevier BV

Subject

General Engineering

Reference8 articles.

1. The evolution of power device technology;Adler;IEEE Trans. Electron Devices,1984

2. Power MOSFETs — Theory and Application;Grant,1989

3. Modern Power Devices;Baliga,1987

5. Optimization of the technological parameters of low-voltage power VDMOS transistors;Trajković,1993

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. Electrical Characteristic analysis of Gate Underlap Strain Channel Cylindrical GAA FET;2023 7th International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech);2023-12-18

3. Design and Simulation of Gate Underlap Strained Cylindrical GAA with High-K Gate Stack;2023 IEEE 3rd International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC);2023-11-24

4. Performance Analysis of Strain Channel High-K Gate Stack Gate Underlap Cylindrical GAA FET;2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS);2023-09-01