Special Issue: Nanowire Field-Effect Transistor (FET)-Reference-Cited by-同舟云学术

Special Issue: Nanowire Field-Effect Transistor (FET)

Published:2020-04-14 Issue:8 Volume:13 Page:1845
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Seoane Natalia^ORCID,García-Loureiro Antonio^ORCID,Kalna Karol

Abstract

This Special Issue looks at recent developments in the research field of Nanowire Field-Effect Transistors (NW-FETs), covering different aspects of technology, physics, and modelling of these nanoscale devices. In this summary, we present seven outstanding articles on NW-FETs by providing a brief overview of the articles’ content.

Publisher

MDPI AG

Subject

General Materials Science

Link

https://www.mdpi.com/1996-1944/13/8/1845/pdf

Reference7 articles.

1. Effects of Applied Voltages on the Charge Transport Properties in a ZnO Nanowire Field Effect Transistor

2. A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs

3. Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits

4. Physics of Discrete Impurities under the Framework of Device Simulations for Nanostructure Devices

5. Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Borophene: A 2D wonder shaping the future of nanotechnology and materials science;Nano Materials Science;2024-05

2. Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance;Scientific Reports;2024-02-05

3. Electrical Characteristic analysis of Gate Underlap Strain Channel Cylindrical GAA FET;2023 7th International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech);2023-12-18

4. Design and Simulation of Gate Underlap Strained Cylindrical GAA with High-K Gate Stack;2023 IEEE 3rd International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC);2023-11-24

5. Performance Analysis of Strain Channel High-K Gate Stack Gate Underlap Cylindrical GAA FET;2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS);2023-09-01