Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs-Reference-Cited by-同舟云学术

Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs

Author:

Pham-Nguyen L.,Fenouillet-Beranger C.,Ghibaudo G.,Skotnicki T.,Cristoloveanu S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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