Self-aligned inversion channel In<inf>0.53</inf>Ga<inf>0.47</inf>As N-MOSFETs with ALD-Al<inf>2</inf>O<inf>3</inf> and MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectrics-Reference-Cited by-同舟云学术

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Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3 and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Published:2009-04 Issue: Volume: Page:
ISSN:
Container-title:2009 International Symposium on VLSI Technology, Systems, and Applications
language:
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Author:

Chiu H. C.,Lin T. D.,Chang P.,Lee W. C.,Chiang C. H.,Kwo J.,Lin Y. S.,Hsu Shawn S. H.,Tsai W.,Hong M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5129138/5159260/05159329.pdf?arnumber=5159329

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition;Applied Physics Letters;2017-09-18

2. Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y2O3/n-GaAs(001);Applied Physics Express;2016-07-13

3. Physics-Based Compact Model for III–V Digital Logic FETs Including Gate Tunneling Leakage and Parasitic Capacitance;IEEE Transactions on Electron Devices;2011-04

4. InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS;MRS Bulletin;2009-07

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