Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y2O3/n-GaAs(001)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=8/a=081501/pdf
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4. Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation
5. III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface
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1. In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures;Applied Physics Letters;2021-06-21
2. Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite;Nanomaterials;2020-08-02
3. Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum;Journal of Crystal Growth;2019-04
4. Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition;Crystal Growth & Design;2019-03-14
5. Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition;Journal of Crystal Growth;2017-11
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