III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface-Reference-Cited by-同舟云学术

III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

Published:2010-04-05 Issue:14 Volume:96 Page:142106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yokoyama Masafumi,Yasuda Tetsuji,Takagi Hideki,Miyata Noriyuki,Urabe Yuji,Ishii Hiroyuki,Yamada Hisashi,Fukuhara Noboru,Hata Masahiko,Sugiyama Masakazu,Nakano Yoshiaki,Takenaka Mitsuru,Takagi Shinichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3374447

Reference15 articles.

1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

2. C-V and G-V characterization of in-situ fabricated Ga2O3GaAs interfaces for inversion/accumulation device and surface passivation applications

3. Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

4. Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs

5. Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

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