Spectral Responsivity Characteristics of Front‐Side Illumination InGaAs PhotoFETs on Si-Reference-Cited by-同舟云学术

Spectral Responsivity Characteristics of Front‐Side Illumination InGaAs PhotoFETs on Si

Published:2020-11-24 Issue:3 Volume:218 Page:2000439
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Oishi Kazuaki¹²^ORCID,Ishii Hiroyuki²,Chang Wen Hsin²^ORCID,Ishii Hiroto¹²,Endoh Akira¹,Fujishiro Hiroki¹,Maeda Tatsuro¹²^ORCID

Affiliation:

1. Department of Applied Electronics Graduate School of Industrial Science and Technology Tokyo University of Science 6-3-1 Niijuku, Katsushika-ku Tokyo Japan

2. Device Technology Research Institute Advance Industrial Science and Technology (AIST) Tsukuba Central 5, 1-1-1 Higashi Tsukuba Ibaraki-ken Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000439

Reference29 articles.

1. Photodetectors based on solution-processable semiconductors: Recent advances and perspectives

2. Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

3. A Real-Time Wearable UV-Radiation Monitor based on a High-Performance p-CuZnS/n-TiO2 Photodetector

4. Infrared Photodetectors Based on CVD-Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity

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