High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with maximum Gm exceeding 1.1 mS/µm: New HBr pretreatment and channel engineering
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424358.pdf?arnumber=5424358
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5. Performance investigation of heterogeneous gate dielectric-gate metal engineered–gate all around-tunnel FET for RF applications;Microsystem Technologies;2016-10-04
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