0.5 μm Pitch Next Generation Hybrid Bonding with High Alignment Accuracy for 3D Integration
Author:
Affiliation:
1. TEL Technology Center, America, LLC,Albany,NY,United States
2. Tokyo Electron America, Inc.,Austin,TX,United States
3. Tokyo Electron Kyushu Ltd.,Koshi,Kumamoto,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195557.pdf?arnumber=10195557
Reference12 articles.
1. Enhancement of the Bond Strength and Reduction of Wafer Edge Voids in Hybrid Bonding
2. Wet Atomic Layer Etching of Copper Structures for Highly Scaled Copper Hybrid Bonding and Fully Aligned Vias
3. Effects of pattern characteristics on copper CMP
4. Die to Wafer Hybrid Bonding: Multi-Die Stacking with Tsv Integration
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1. Single-Grain Cu μ-Joint Formation Induced by Selective Under-Seed-Metallurgy for Hybrid Bonding;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
2. Multi-Functional Self-Assembled Monolayer for Chip-to-Chip and Chip-to-Wafer Hybrid Bonding;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
3. Annealing Effects in Sub-8 μm Pitch Die-to-Wafer Hybrid Bonding;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
4. Quantifying the Electrical Impact of Bonding Misalignment for 0.5 μm Pitch Hybrid Bonding Structures;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
5. Hybrid Bonding for Ultra-High-Density Interconnect;Journal of Electronic Packaging;2024-03-08
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