Wet Atomic Layer Etching of Copper Structures for Highly Scaled Copper Hybrid Bonding and Fully Aligned Vias

Author:

Netzband Christopher1,Arkalgud Sitaram1,Abel Paul2,Faguet Jacques2

Affiliation:

1. LLC,TEL Technology Center, America,Albany,NY,United States

2. Tokyo Electron America, Inc.,Austin,TX,United States

Publisher

IEEE

Reference9 articles.

1. Feasibility study of fully self aligned vias for 5nm node BEOL

2. Multi-Stack Wafer Bonding Demonstration utilizing Cu to Cu Hybrid Bonding and TSV enabling Diverse 3D Integration

3. Mechanics, mechanisms and modeling of the chemical mechanical polishing process;lai;Ph D Dissertation,2001

4. Effects of pattern characteristics on copper CMP

5. CRC Handbook of Chemistry and Physics;haynes,0

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Achieving Sub-nm Copper Recess Controllability for Advanced 3D Integration: An Experimental and Atomic-scale Simulation Study on Wet Atomic Layer Etching Process;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

2. 0.5 μm Pitch Next Generation Hybrid Bonding with High Alignment Accuracy for 3D Integration;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

3. Recent Advances and Trends in Cu–Cu Hybrid Bonding;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-03

4. Cu-Cu Hybrid Bonding;Chiplet Design and Heterogeneous Integration Packaging;2023

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