Die to Wafer Hybrid Cu Bonding for Fine Pitch 3D-IC Applications

Author:

Kim Yeongseon1,Kim Juhyeon1,Kim Hyoeun1,Lee Haksun1,Kim Dohyun1,Seo Sun-Kyoung1,Jo Chajea1,Kim Dae-Woo1

Affiliation:

1. Samsung Electronics Co, Ltd,Advanced Package Team,Cheonan-si,Chungcheongnam-Do,South Korea

Publisher

IEEE

Reference14 articles.

1. Innovative structures to test bonding alignment and characterize high density interconnects in 3D-IC;imed;2017 15th IEEE International New Circuits and Systems Conference (NEWCAS),2017

2. A study on bonding pad structure and layout for Fine pitch hybrid bonding;juhyeon;2022 IEEE 72nd Electronic Components and Technology Conference (ECTC),2022

3. Process and Design Optimization for Hybrid Cu Bonding Void;hyoeun;2022 IEEE 72nd Electronic Components and Technology Conference (ECTC),2022

4. Die to wafer direct hybid bonding demonstration with high alignment accuracy and electrical yields;amadine;2019 International 3D Systems Integration Conference (3DIC),2019

5. Characterization of fine pitch hybrid bonding pads using electrical misalignment test vehicle;imed;2019 IEEE 69th Electronic Components and Technology Conference (ECTC),2019

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