Die to Wafer Hybrid Cu Bonding for Fine Pitch 3D-IC Applications-Reference-Cited by-同舟云学术

Die to Wafer Hybrid Cu Bonding for Fine Pitch 3D-IC Applications

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
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Author:

Kim Yeongseon¹,Kim Juhyeon¹,Kim Hyoeun¹,Lee Haksun¹,Kim Dohyun¹,Seo Sun-Kyoung¹,Jo Chajea¹,Kim Dae-Woo¹

Affiliation:

1. Samsung Electronics Co, Ltd,Advanced Package Team,Cheonan-si,Chungcheongnam-Do,South Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195298.pdf?arnumber=10195298

Reference14 articles.

1. Innovative structures to test bonding alignment and characterize high density interconnects in 3D-IC;imed;2017 15th IEEE International New Circuits and Systems Conference (NEWCAS),2017

2. A study on bonding pad structure and layout for Fine pitch hybrid bonding;juhyeon;2022 IEEE 72nd Electronic Components and Technology Conference (ECTC),2022

3. Process and Design Optimization for Hybrid Cu Bonding Void;hyoeun;2022 IEEE 72nd Electronic Components and Technology Conference (ECTC),2022

4. Die to wafer direct hybid bonding demonstration with high alignment accuracy and electrical yields;amadine;2019 International 3D Systems Integration Conference (3DIC),2019

5. Characterization of fine pitch hybrid bonding pads using electrical misalignment test vehicle;imed;2019 IEEE 69th Electronic Components and Technology Conference (ECTC),2019

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4. Development of two different molding methods in 2.5D package with 20 μm or less fine bump pitch CoW structure;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

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