Voids-free Die-level Cu/ILD Hybrid bonding-Reference-Cited by-同舟云学术

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Voids-free Die-level Cu/ILD Hybrid bonding

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
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Author:

Sakuma Katsuyuki¹,Yu Roy¹,Polomoff Nicholas¹,Darling Luke¹,Chowdhury Promod¹,Raghavan Sathya¹,Seifert Keodara¹,Knickerbocker John¹,McHerron Dale¹,Li Ming²,So Siu Cheung²,Kwok So Ying²,Fan Chun Ho²,Lau Siu Wing²

Affiliation:

1. IBM T. J. Watson Research Center,Albany,NY,U.S.A.

2. ASMPT,Hong Kong

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195284.pdf?arnumber=10195284

Reference12 articles.

1. Toward Three-Dimensional High Density

2. High Performance and Energy Efficient Computing with Advanced SoIC™ Scaling

3. Surface Energy Characterization for Die-Level Cu Hybrid Bonding

4. An enhanced thermo-compression bonding process to address warpage in 3D integration of large die on organic substrates

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. IBM T.J. Watson Research Centerでの三次元チップレット集積化技術開発への挑戦;Journal of The Japan Institute of Electronics Packaging;2023-09-01

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