Two-Step Ar/N2 Plasma-Activated Al Surface for Al-Al Direct Bonding
Author:
Affiliation:
1. Nanyang Technological University,School of Electrical and Electronic Engineering,Singapore,Singapore
Funder
Nanyang Technological University
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9816066/9816372/09816612.pdf?arnumber=9816612
Reference23 articles.
1. Direct Al–Al contact using low temperature wafer bonding for integrating MEMS and CMOS devices
2. Low temperature hermetic sealing by aluminum thermocompression bonding using tin intermediate layer
3. Process development and reliability study on Ar/N2 plasma activated Cu-Cu wafer-level bonding;chua;The Conference on Wafer Bonding for MEMS 3D-and Wafer Level Integration – WaferBond’19,2019
4. Ar/N2 Plasma Induced Metastable CuxNy for Cu-Cu Direct Bonding
5. Ar/N2 Plasma Induced Metastable CuxNy for Cu-Cu Direct Bonding
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