Novel Ga Assisted Low-temperature Bonding Technology for Fine-pitch Interconnects
Author:
Affiliation:
1. CRD, ASE Group,Product Characterization,Kaohsiung,Taiwan
2. National Cheng Kung University,Department of Materials Science and Engineering,Tainan,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9816066/9816372/09816535.pdf?arnumber=9816535
Reference22 articles.
1. Effect of Au/Pd bilayer metallization on solder/Cu interfacial reaction and growth kinetics of Cu Sn intermetallic compounds during solid-state aging
2. The dissolution and reprecipitation behavior of the AuSn4 intermetallic compound in a solder joint during liquid-state and solid-state reactions
3. The interfacial bilayer Cu6Sn5 formed in a Sn–Ag–Cu flip-chip solder joint incorporating Au/Pd metallization during solid-state aging
4. Removed organic solderability preservative (OSPs) by Ar/O2 microwave plasma to improve solder joint in thermal compression flip chip bonding
5. Microstructural Evolution of Intermetallic Compounds in TCNCP Cu Pillar Solder Joints
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1. Applications of Ni and Ag metallizations at the solder/Cu interfaces in advanced high-power automobile interconnects: An electromigration study;Surface and Coatings Technology;2024-05
2. An Electromigration Study of Cu Pillar Interconnects in Flip-chip QFN Packaging under Extreme Conditions for High-power Applications;2023 IEEE 25th Electronics Packaging Technology Conference (EPTC);2023-12-05
3. Recent Advances and Trends in Cu–Cu Hybrid Bonding;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-03
4. Cu-Cu Hybrid Bonding;Chiplet Design and Heterogeneous Integration Packaging;2023
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