Unveiling the Self-Heating and Process Variation Reliability of a Junctionless FinFET-Based Hydrogen Gas Sensor
Author:
Affiliation:
1. PDPM Indian Institute of Information Technology Design & Manufacturing, Jabalpur, India
2. School of Electrical Sciences, Indian Institute of Technology, Bhubaneswar, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7782634/10214959/10232870.pdf?arnumber=10232870
Reference18 articles.
1. Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET
2. Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants
3. Demonstration of a Junctionless Negative Capacitance FinFET-based Hydrogen Gas Sensor: A Reliability Perspective
4. Demonstration of a Nanosheet FET With High Thermal Conductivity Material as Buried Oxide: Mitigation of Self-Heating Effect
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1. Sensitivity and Reliability Assessment of a Strained Silicon Junctionless FinFET-based Hydrogen Gas Sensor;2024 IEEE Latin American Electron Devices Conference (LAEDC);2024-05-08
2. Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection;Nanomaterials;2024-01-19
3. Gate Oxide Induced Reliability Assessment of Junctionless FinFET-Based Hydrogen Gas Sensor;2023 IEEE SENSORS;2023-10-29
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