Sensitivity and Reliability Assessment of a Strained Silicon Junctionless FinFET-based Hydrogen Gas Sensor-Reference-Cited by-同舟云学术

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Sensitivity and Reliability Assessment of a Strained Silicon Junctionless FinFET-based Hydrogen Gas Sensor

Published:2024-05-08 Issue: Volume: Page:1-4
ISSN:
Container-title:2024 IEEE Latin American Electron Devices Conference (LAEDC)
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Author:

Gandhi Navneet¹,Rathore Sunil¹,Jaisawal Rajeewa Kumar¹,Kondekar P. N.¹,Kumar Naveen²,Dixit Ankit²,Georgiev Vihar²,Bagga Navjeet³

Affiliation:

1. PDPM-IIITDM,VLSI Lab,Electronics & Communication Department,Jabalpur,India

2. University of Glasgow,Device Modelling Group James Watt School of Engineering,UK

3. Indian Institute of Technology,Electronics & Communication Department,Bhubaneswar,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10555569/10555588/10555835.pdf?arnumber=10555835

Reference9 articles.

1. Sensitivity Analysis and Design of Negative-Capacitance Junctionless Transistor for High-Performance Applications

2. Demonstration of a Junctionless Negative Capacitance FinFET-based Hydrogen Gas Sensor: A Reliability Perspective

3. Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit

4. A hydrogen−sensitive MOS field−effect transistor

5. Tunnel-field-effect-transistor based gas-sensor: Introducing gas detection with a quantum-mechanical transducer

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