Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET
Author:
Affiliation:
1. PDPM-IIITDM Jabalpur,India
2. IIT Roorkee,India
3. VIT Chennai,India
4. Korea Military Academy,Seoul,Korea
5. IIT Bhubaneswar,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10103127.pdf?arnumber=10103127
Reference8 articles.
1. Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs
2. Impact of Self-Heating on Negative-Capacitance FinFET: Device-Circuit Interaction
3. Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants
4. High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of S/D Extension Length and Sheet Stacking on Transient Behavior of Nanosheet FETs;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19
2. Self-Heating and Process-Induced Threshold Voltage Aware Reliability and Aging Analysis of Forksheet FET;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
3. Impact of Variation in Fin Thickness and Self-Heating on the Output Characteristics of Triangular Gate FinFETs;Silicon;2024-01-04
4. Benchmarking of Multi-Bridge-Channel FETs Toward Analog and Mixed-Mode Circuit Applications;IEEE Access;2024
5. Improvement of Thermal Characteristics and On-Current in Vertically Stacked Nanosheet FET by Parasitic Channel Height Engineering;IEEE Access;2024
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3