Demonstration of a Nanosheet FET With High Thermal Conductivity Material as Buried Oxide: Mitigation of Self-Heating Effect-Reference-Cited by-同舟云学术

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Demonstration of a Nanosheet FET With High Thermal Conductivity Material as Buried Oxide: Mitigation of Self-Heating Effect

Published:2023-04 Issue:4 Volume:70 Page:1970-1976
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Rathore Sunil¹^ORCID,Jaisawal Rajeewa Kumar¹^ORCID,Kondekar P. N.¹,Bagga Navjeet²^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Design, and Manufacturing, Jabalpur, India

2. School of Electrical Sciences, Indian Institute of Technology Bhubaneswar, Odisha, Bhubaneswar, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10040990.pdf?arnumber=10040990

Reference33 articles.

1. Investigation of Sidewall High-k Interfacial Layer Effect in Gate-All-Around Structure

2. Fabrication of silicon-on-SiO2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects

3. Leakage Optimization of the Buried Oxide Substrate of Nanosheet Field-Effect Transistors

4. Air spacer for 10 nm FinFET CMOS and beyond;cheng;IEDM Tech Dig,2016

5. Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs

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1. A machine learning approach to accelerate reliability prediction in nanowire FETs from self-heating perspective;Microelectronics Reliability;2024-10

2. Characterizing parameter variations for enhanced performance and adaptability in 3 nm MBCFET technology;Microelectronics Journal;2024-09

3. Quantum coupling and self-heating impacts on threshold voltages of GaN metal–insulator-semiconductor high-electron-mobility transistors;Results in Physics;2024-09

4. Study on trap sensitivity for single material gate and double material gate nano-ribbon FETs;Physica Scripta;2024-06-20

5. Unveiling the reliability of negative capacitance FinFET with confrontation of different HfO2-ferroelectric dopants;Solid-State Electronics;2024-05

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