Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch-Reference-Cited by-同舟云学术

Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

Published:2023-05 Issue:5 Volume:70 Page:2276-2281
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ravsher Taras¹^ORCID,Garbin Daniele²^ORCID,Fantini Andrea²,Degraeve Robin²^ORCID,Clima Sergiu²^ORCID,Donadio Gabriele Luca²^ORCID,Kundu Shreya²,Hody Hubert²^ORCID,Devulder Wouter²,Van Houdt Jan¹^ORCID,Afanas’ev Valeri¹^ORCID,Delhougne Romain²,Kar Gouri Sankar²

Affiliation:

1. Department of Physics and Astronomy, Katholieke Universiteit Leuven, Leuven, Belgium

2. imec, Leuven, Belgium

Funder

imec Industrial Affiliation Program on Active Memory Devices

Research Foundation—Flanders

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10106527/10064706.pdf?arnumber=10064706

Reference36 articles.

1. A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability

2. A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over $100\times $ for Storage Class Memory Applications

3. Atomic layer deposition of chalcogenides for next-generation phase change memory

4. Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating >103s retention, >1011 cycles endurance and Lg scalability down to 14 nm;belmonte;IEDM Tech Dig,2021

5. Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area

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