Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device-Reference-Cited by-同舟云学术

Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device

Published:2024-05 Issue:5 Volume:71 Page:3351-3357
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Jangseop¹^ORCID,Seo Yoori¹^ORCID,Ban Sanghyun¹^ORCID,Kim Dong Gwan²,Park Yu Bin²,Lee Tae Hoon²,Hwang Hyunsang¹^ORCID

Affiliation:

1. Department of Material Science and Engineering, Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, South Korea

2. School of Material Science and Engineering, Kyungpook University, Daegu, South Korea

Funder

National Research Foundation of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10482894.pdf?arnumber=10482894

Reference28 articles.

1. Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

2. Complementary resistive switches for passive nanocrossbar memories

3. Te-based amorphous binary OTS device with excellent selector characteristics for x-point memory applications

4. Enhanced Switching Characteristics of an Ovonic Threshold Switching Device With an Ultra-Thin MgO Interfacial Layer

5. Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP

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