Study of SiGeAsTe and SiGeAsSe chalcogenide thin films by Raman spectroscopy and understanding of their OTS properties-Reference-Cited by-同舟云学术

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Study of SiGeAsTe and SiGeAsSe chalcogenide thin films by Raman spectroscopy and understanding of their OTS properties

Published:2024-11 Issue: Volume:644 Page:123175
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Keukelier Jonas^ORCID,Devulder Wouter,Sergeant Stefanie,Nuytten Thomas,Meersschaut Johan,Opsomer Karl,Detavernier Christophe

Funder

Ghent University

Publisher

Elsevier BV

Reference61 articles.

1. Metastability and Phase Change Phenomena;Kolobov,2012

2. Chalcogenide materials engineering for phase-change memory and future electronics applications: From Sb–Te to Bi–Te;Saito;Phys. Status Solidi (RRL)–Rapid Res. Lett.,2021

3. Chalcogenides by design: Functionality through metavalent bonding and confinement;Kooi;Adv. Mater.,2020

4. Phase-change materials in electronics and photonics;Zhang;MRS Bull.,2019

5. High thermal stability and fast operation speed phase-change memory devices containing hf-doped Ge2Sb2Te5 films;Wang;Mater. Lett.,2020

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