Understanding the Resistive Switching Mechanism of 2-D RRAM: Monte Carlo Modeling and a Proposed Application for Reliability Research-Reference-Cited by-同舟云学术

Understanding the Resistive Switching Mechanism of 2-D RRAM: Monte Carlo Modeling and a Proposed Application for Reliability Research

Published:2023-04 Issue:4 Volume:70 Page:1676-1681
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang Yifu¹^ORCID,Gu Yuqian¹,Chang Yao-Feng²,Chen Ying-Chen³^ORCID,Akinwande Deji¹^ORCID,Lee Jack C.¹

Affiliation:

1. Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA

2. Intel Corporation, Hillsboro, OR, USA

3. School of Informatics, Computing and Cyber Systems and the Center for Materials Interfaces in Research and Applications (¡MIRA!), Northern Arizona University, Flagstaff, AZ, USA

Funder

National Science Foundation

NSF MRSEC

NSF NNCI

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10058991.pdf?arnumber=10058991

Reference29 articles.

1. Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

2. Analysis on switching mechanism of graphene oxide resistive memory device

3. Thinnest Nonvolatile Memory Based on Monolayer h‐BN

4. 2D RRAM and Verilog-A model for Neuromorphic Computing

5. Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

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