Analysis on switching mechanism of graphene oxide resistive memory device
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3624947
Reference16 articles.
1. Nanoionics-based resistive switching memories
2. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
3. Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic Materials
4. Switching and filamentary conduction in non-volatile organic memories
5. Reproducible resistive switching in nonvolatile organic memories
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