Voltage controlled polarity switching of photoresponse in graphene oxide-based memristor-Reference-Cited by-同舟云学术

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Voltage controlled polarity switching of photoresponse in graphene oxide-based memristor

Published:2024 Issue: Volume: Page:
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Saha Soma¹,Datta Anindya¹²^ORCID,Kundu Tapanendu¹³^ORCID

Affiliation:

1. Centre for Research in Nanotechnology & Science (CRNTS), Indian Institute of Technology Bombay, Mumbai 400076, India

2. Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400076, India

3. Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India

Abstract

Graphene oxide-based metal/insulator/metal device: a memristor exhibiting voltage-dependent polarity switching of photoresponse by precisely controlling the intensity of illumination.

Funder

University Grants Commission

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC02812K

Reference54 articles.

1. Modeling and simulation of graphene-oxide-based RRAM

2. Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

3. Memristor-The missing circuit element

4. Modelling the switching effect in graphene oxide-based memristors

5. The missing memristor found

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