Thinnest Nonvolatile Memory Based on Monolayer h‐BN-Reference-Cited by-同舟云学术

Thinnest Nonvolatile Memory Based on Monolayer h‐BN

Published:2019-02-17 Issue:15 Volume:31 Page:1806790
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Wu Xiaohan¹^ORCID,Ge Ruijing¹,Chen Po‐An¹²,Chou Harry¹,Zhang Zhepeng³,Zhang Yanfeng³,Banerjee Sanjay¹,Chiang Meng‐Hsueh²,Lee Jack C.¹,Akinwande Deji¹^ORCID

Affiliation:

1. Microelectronics Research Center University of Texas at Austin Austin TX 78758 USA

2. Institute of Microelectronics Department of Electrical Engineering National Cheng Kung University Tainan 701 Taiwan

3. Department of Materials Science and Engineering College of Engineering Peking University Beijing 100871 China

Funder

National Science Foundation

National Natural Science Foundation of China

Army Research Office

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201806790

Reference31 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Two-dimensional flexible nanoelectronics

3. Buckled two-dimensional Xene sheets

4. Two-dimensional nanomaterial-based field-effect transistors for chemical and biological sensing

5. Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies

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