Enhancing simulation feasibility for multi-layer 2D MoS<sub>2</sub> RRAM devices: reliability performance learnings from a passive network model-Reference-Cited by-同舟云学术

Enhancing simulation feasibility for multi-layer 2D MoS₂ RRAM devices: reliability performance learnings from a passive network model

Published:2024 Issue:31 Volume:26 Page:20962-20970
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Lee Seonjeong¹^ORCID,Huang Yifu²^ORCID,Chang Yao-Feng³^ORCID,Baik Seungjae⁴,Lee Jack C.²,Koo Minsuk⁵^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, University of Seoul, Seoul 02504, South Korea

2. Department of Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Road, 78758 Austin, TX, USA

3. Intel Corporation, 2501 NE Century Road, 97124 Hillsboro, OR, USA

4. Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si 18448, South Korea

5. Department of Computer Science and Engineering, Incheon National University, Incheon 22012, South Korea

Abstract

This paper presents a novel simulator aimed at providing an intuitive, visual representation of the stochastic behaviors involved in the RS process of multi-layer 2D MoS2 RRAM devices.

Funder

Incheon National University

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP02669A

Reference47 articles.

1. Memristor devices for neural networks

2. CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors

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5. Metal–Oxide RRAM