On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects-Reference-Cited by-同舟云学术

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Published:2023-09 Issue:9 Volume:70 Page:4518-4524
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xue Yongkang¹^ORCID,Ren Pengpeng¹^ORCID,Wu Junjie¹^ORCID,Liu Zhuyou²,Wang Shuying¹,Li Yu³^ORCID,Wang Zirui³,Sun Zixuan³^ORCID,Wang Da¹^ORCID,Wen Yichen¹,Xia Shiyu¹,Zhang Lining³^ORCID,Zhang Jianfu⁴^ORCID,Ji Zhigang¹^ORCID,Luo Junwei²^ORCID,Deng Huixiong²,Wang Runsheng³^ORCID,Yang Lianfeng⁵,Huang Ru³

Affiliation:

1. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiaotong University, Shanghai, China

2. Center of Materials Science and Optoelectronics Engineering, UCAS, Beijing, China

3. School of Integrated Circuits, Peking University, Beijing, China

4. School of Engineering, Liverpool John Moores University, Liverpool, U.K.

5. Primarus Technologies, Shanghai, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject