Compact Model of a Bulk FinFET Quantum Dot Toward Single Chip Integration of Qubits and Control Electronics for Quantum Computing Applications
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, India
2. IBM Research, Albany, NY, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10136238/10105146.pdf?arnumber=10105146
Reference22 articles.
1. Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures
2. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
3. Low-temperature electron mobility in Trigate SOI MOSFETs
4. Accurate Modeling of Cryogenic Temperature Effects in 10-nm Bulk CMOS FinFETs Using the BSIM-CMG Model
5. Quantum particle in a box with moving walls
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1. Multiple-Gate FET Quantum Dot Behavior and a Proximity Charge Sensing Model;IEEE Transactions on Electron Devices;2024-06
2. Developing Process Design Kit (Q-PDK) for Co-Integrated Quantum computers;2024 IEEE Latin American Electron Devices Conference (LAEDC);2024-05-08
3. Performance Analysis and Compact Modeling of 12-nm P-channel Bulk FinFETs at Cryogenic Operating Temperatures for Quantum Computing Applications;2024 IEEE Latin American Electron Devices Conference (LAEDC);2024-05-08
4. Impact of Co-Integration on the Performance of Full CMOS Based Hybrid SET-FET Circuits for Scalable Quantum Computing using FinFET Technologies;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
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