Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/20/i=6/a=065202/pdf
Reference24 articles.
1. Single-electron devices and their applications
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3. Compact analytical model for room-temperature-operating silicon single-electron transistors with discrete quantum energy levels
4. Quantum cellular automata
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