Effects of energy band structure on gallium arsenide based MOSFET-Reference-Cited by-同舟云学术

Effects of energy band structure on gallium arsenide based MOSFET

Published:2020-07-18 Issue:2 Volume:3 Page:
ISSN:2736-0652
Container-title:Journal of Advances in Science and Engineering
language:
Short-container-title:J. Adv. Sci. Eng.

Author:

Kyaw Wut Hmone^ORCID,Aye May Nwe Myint

Abstract

This research work is focused on material science and semiconductor engineering. It emphasized on the semiconductor material such as Gallium arsenide (GaAs). The Gallium arsenide semiconductor material was used as a group III-V compound for metal-oxide semiconductor field effect transistor (MOSFET) modeling. The band-gap energy structures were analyzed by using material parameters such as Varshni parameters, temperature and doping concentrations. Then, an electrical characteristic was carried out depending on the current and voltage relationship. The current flowing in the device is associated with a gate voltage applied to the device. From this paper, the analysis of MOSFET modeling was investigated using mathematical equations and MATLAB simulation.

Publisher

Sciengtex Publishing

Subject

General Medicine

Reference14 articles.

1. R. C. Purandare, Investigations on: A homojunction of GaAs using synchrotron radiation, B surface passivation of GaAs, PhD thesis, Savitribai Phule Pune University, India, 2004.

2. R. Clerc, A. Spinelli, G. Ghibaudo, and G. Pananakakis, “Theory of direct tunneling current in metal-oxide-semiconductor structures”, J Appl Physics, vol. 91, no. 3, pp. 1400–1409, 2002.

3. T. E. Schlesinger, “Gallium arsenide” in Encyclopedia of Materials: Science and Technology, 2nd ed., pp. 3431-3435 2001; doi: 10.1016/b0-08-043152-6/00612-4

4. E. F. Schubert, Doping in III-V semiconductors, Cambridge University Press: Cambridge, UK, 2004.

5. W-H. Lee and P. Y. Su, “Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors”, Nanotechnol., vol. 20, no. 6, 2009.