Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels-Reference-Cited by-同舟云学术

Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels

Published:2023-08 Issue:8 Volume:70 Page:4194-4197
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chiu Jih-Chao¹^ORCID,Liu Yuan-Ming²^ORCID,Sarkar Eknath¹^ORCID,Chen Yu-Ciao²^ORCID,Fan Yu-Cheng²^ORCID,Yen Chia-Chun³^ORCID,Chen Tsang-Long³,Chou Cheng-Hsu⁴,Liu C. W.⁵^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

2. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan

3. Technology Integration Department I, Innolux Corporation, Tainan, Taiwan

4. Technology Development Division Group II, Innolux Corporation, Tainan, Taiwan

5. Department of Electrical Engineering, the Graduate Institute of Electronics Engineering, the Graduate Institute of Photonics and Optoelectronics, and the Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10194493/10155621.pdf?arnumber=10155621

Reference21 articles.

1. Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer

2. Present status of amorphous In–Ga–Zn–O thin-film transistors;kamiya;Sci Technol Adv Mater,2010

3. Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs

4. Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures

5. Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor