Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs-Reference-Cited by-同舟云学术

Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs

Author:

Lee Ming-Xuan¹,Chiu Jih-Chao¹,Li Song-Ling²,Sarkar Eknath¹,Chen Yu-Ciao²,Yen Chia-Chun³,Chen Tsang-Long³,Chou Cheng-Hsu⁴,Liu C. W.¹^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

2. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan

3. Technology Integration Department I, Innolux Corporation, Tainan, Taiwan

4. Technology Development Division Group II, Innolux Corporation, Tainan, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Ministry of Education, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

Reference46 articles.

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