Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3609873
Reference12 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Toward High-Performance Amorphous GIZO TFTs
3. Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display
4. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
5. Gate-bias stress in amorphous oxide semiconductors thin-film transistors
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