Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness-Reference-Cited by-同舟云学术

Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness

Published:2023-06 Issue:6 Volume:70 Page:2962-2969
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yu Eunseon¹^ORCID,Lyu Xiao¹,Si Mengwei²^ORCID,Ye Peide D.¹^ORCID,Roy Kaushik¹^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Purdue University, West Lafayette, USA

2. Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China

Funder

Semiconductor Research Corporation (SRC)/Defense Advanced Research Projects Agency (DARPA) the Joint University Microelectronics Program (JUMP) ASCENT Center

Air Force Office of Scientific Research

Center for Brain-Inspired Computing

SRC/DARPA JUMP Center

National Science Foundation

Intelligence Advanced Research Projects Activity (IARPA) Microelectronics for Artificial Intelligence (MicroE4AI) Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/16/10136238/10122632-aam.pdf

Reference59 articles.

1. The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity;park;Appl Phys Lett,2014

2. Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

3. High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

4. Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

5. Enhanced Ferroelectric Properties in Hf 0.5 Zr 0.5 O 2 Films Using a HfO 0.61 N 0.72 Interfacial Layer

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