Advances in High Performance RDL Technologies for Enabling IO Density of 500 IOs/mm/layer and 8-μm IO Pitch Using Low-k Dielectrics-Reference-Cited by-同舟云学术

Advances in High Performance RDL Technologies for Enabling IO Density of 500 IOs/mm/layer and 8-μm IO Pitch Using Low-k Dielectrics

Published:2020-06 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE 70th Electronic Components and Technology Conference (ECTC)
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Author:

Liu Fuhan,Zhang Rui,DeProspo Bartlet H.,Dwarakanath Shreya,Nimbalkar Pratik,Ravichandran Siddharth,Weyers David,Kathaperumal Mohanalingam,Tummala Rao R.,Swaminathan Madhavan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9151098/9159179/09159527.pdf?arnumber=9159527

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