1.65 ¼m L/S high density interconnect on organic substrate by advanced semi-additive process for HPC applications-Reference-Cited by-同舟云学术

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1.65 ¼m L/S high density interconnect on organic substrate by advanced semi-additive process for HPC applications

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
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Author:

Hamieh Hussein¹,Borges Juliano¹,Paradis Étienne¹,Beilliard Yann¹,Ecoffey Serge²,De Sousa Isabel²,Laliberte Martin¹,Drouin Dominique¹

Affiliation:

1. Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke,Laboratoire Nanotechnologies Nanosystèmes (LN2) CNRS,Sherbrooke,Canada

2. IBM Canada,Bromont,Canada

Funder

UdeS

CNRS

INSA Lyon

UGA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195799.pdf?arnumber=10195799

Reference19 articles.

1. Organic Damascene Process for 1.5- $\mu$ m Panel-Scale Redistribution Layer Technology Using 5- $\mu$ m-Thick Dry Film Photosensitive Dielectrics

2. First Demonstration of Silicon-Like >250 I/O Per mm Per Layer Multilayer RDL on Glass Panel Interposers by Embedded Photo-Trench and Fly Cut Planarization

3. Embedded Trench Redistribution Layers (RDL) by Excimer Laser Ablation and Surface Planer Processes

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