Superior Performance β-Ga<sub>2</sub>O<sub>3</sub> Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier-Reference-Cited by-同舟云学术

Superior Performance β-Ga₂O₃ Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier

Published:2023-03 Issue:3 Volume:70 Page:1199-1205
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wu Feihong¹,Wang Yuangang²^ORCID,Jian Guangzhong³,Xu Guangwei¹^ORCID,Zhou Xuanze¹^ORCID,Guo Wei¹^ORCID,Du Jiahong¹,Liu Qi¹^ORCID,Dun Shaobo²,Yu Zhaoan³,Lv Yuanjie²^ORCID,Feng Zhihong²^ORCID,Cai Shujun²^ORCID,Long Shibing¹^ORCID

Affiliation:

1. School of Microelectronics, University of Science and Technology of China (USTC), Hefei, China

2. National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, China

3. Key Laboratory of Microelectronics Devices and Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Funder

National Natural Science Foundation of China

Key-Area Research and Development Program of Guangdong Province

Fundamental Research Plan

Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10041807.pdf?arnumber=10041807

Reference36 articles.

1. Diode Reverse Recovery Process and Reduction of a Half-Wave Series Cockcroft–Walton Voltage Multiplier for High-Frequency High-Voltage Generator Applications

2. Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes

3. Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2

4. Optimal design of a Half-Wave Cockroft-Walton Voltage Multiplier with minimum total capacitance

5. Temperature-dependent current-voltage characteristics of β-Ga2O3 trench Schottky barrier diodes

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