Temperature-dependent current-voltage characteristics of β-Ga2O3 trench Schottky barrier diodes
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
Funder
NASA SBIR
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0002520
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