β-(Al,Ga)2O3 for High Power Applications — A Review on Material Growth and Device Fabrication-Reference-Cited by-同舟云学术

β-(Al,Ga)2O3 for High Power Applications — A Review on Material Growth and Device Fabrication

Published:2019-03 Issue:01n02 Volume:28 Page:1940006
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

Jian Ashley (Zhe)¹,Khan Kamruzzaman¹²,Ahmadi Elaheh¹

Affiliation:

1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA

2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA

Abstract

Gallium Oxide has attracted a great deal of attention for power electronics due to its large bandgap (∼4.8 eV) as well as availability of cost effective, large area, high quality substrates. In this article, we will discuss advancements in homoepitaxial and heteroepitaxial growth of β-(Al,Ga)2O3 and their heterostructures via different growth techniques with the emphasis on metal organic chemical vapor deposition, molecular beam epitaxy, and halide vapor phase epitaxy. We will also review various device structures demonstrated for high power applications.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156419400068

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