Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact
Author:
Affiliation:
1. Department of Chemical Engineering, University of Florida 1 , Gainesville, Florida 32611, USA
2. Department of Materials Science and Engineering, University of Florida 2 , Gainesville, Florida 32611, USA
Abstract
Funder
Department of Defense, defense Thread Reduction Agency
Publisher
AIP Publishing
Link
https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0227210/20140770/095201_1_5.0227210.pdf
Reference59 articles.
1. High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact;Appl. Phys. Express,2024
2. Improving the heat dissipation and current rating of Ga2O3 Schottky diodes by substrate thinning and junction-side cooling;IEEE T Power Electron,2023
3. 500 °C operation of β-Ga2O3 field-effect transistors;Appl. Phys. Lett.,2022
4. A review of Ga2O3 materials, processing, and devices;Appl. Phys. Rev.,2018
5. A review of β-Ga2O3 power diodes;Materials,2024
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